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Pragyey Kumar Kaushik
Pragyey Kumar Kaushik
Indian Institute of Technology Delhi
Materials science
Optoelectronics
High-electron-mobility transistor
algan gan
Voltage
5
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Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
2021
Nanoscale Research Letters
Pragyey Kumar Kaushik
Sankalp Kumar Singh
Ankur Gupta
Ananjan Basu
Edward Yi Chang
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Small-Signal Analysis of Channel Resistance $R_{{L}}$ at Low Gate Bias Voltages in AlGaN/GaN HEMTs
2021
IEEE Transactions on Electron Devices
Pragyey Kumar Kaushik
Sankalp kumar Singh
Ankur Gupta
Ananjan Basu
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An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs
2020
Pragyey Kumar Kaushik
Sankalp Kumar Singh
Ankur Gupta
Ananjan Basu
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Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor
2020
Sankalp Kumar Singh
Pragyey Kumar Kaushik
Ramesh Kumar Kakkerla
Ankur Gupta
Deepak Anandan
Venkatesan Nagarajan
Hung-Wei Yu
Edward Yi Chang
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Extraction and de-embedding of S-parameters using small-signal modeling for AlGaN/GaN HEMTs
2017
INDICON | IEEE India Conference
Pragyey Kumar Kaushik
Umakant Goyal
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