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Huaiyuan Zhang
Huaiyuan Zhang
Auburn University
Physics
Optoelectronics
Heterojunction bipolar transistor
Linearity
Heterojunction
4
Papers
3
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RF Linearity of SiGe HBT: Physics, Compact Modeling Using Mextram 505 and X-Parameter Based Measurements
2021
EDTM | IEEE Electron Devices Technology and Manufacturing Conference
Guofu Niu
Yiao Li
Xuewei Ding
Anni Zhang
Huaiyuan Zhang
A.J. Scholten
Marnix Willemsen
Ralf Pijper
L.F. Tiemeijer
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Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM
2021
IEEE Transactions on Electron Devices
Huaiyuan Zhang
Guofu Niu
Marnix Willemsen
Andries J. Scholten
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Extraction of Drain Current Thermal Noise in a 28 nm High- ${k}$ /Metal Gate RF CMOS Technology
2018
IEEE Transactions on Electron Devices
Huaiyuan Zhang
Guofu Niu
Qingqing Liang
Kimihiko Imura
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An Analytical Model of Avalanche Multiplication Factor for Wide Temperature Range Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors
2016
Huaiyuan Zhang
G. Niu
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