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Shimpei Yamaguchi
Shimpei Yamaguchi
GlobalFoundries
Electronic engineering
Engineering
Engineering physics
Quantum well
Transistor
5
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10
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Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET
2018
Microelectronics Reliability
Shimpei Yamaguchi
Liesbeth Witters
Jerome Mitard
Geert Eneman
Geert Hellings
Andriy Hikavyy
Roger Loo
Naoto Horiguchi
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Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices
2017
Microelectronics Reliability
Shimpei Yamaguchi
Zeynel Bayindir
Xiaoli He
Suresh Uppal
P. Srinivasan
Chloe Yong
Dongil Choi
Manoj Joshi
Hyuck Soo Yang
Owen Hu
Srikanth Samavedam
Dong Kyun Sohn
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Trade-Off between Gate Oxide Integrity and Transistor Performance for FinFET Technology
2017
ECS Journal of Solid State Science and Technology
Hsien-Ching Lo
Jianwei Peng
Chloe Yong
Suresh Uppal
Yi Qi
Hui Zhan
Yan Ping Shen
Xiaobo Chen
Jianghu Yan
Baofu Zhu
Shashidhar Shintri
Shimpei Yamaguchi
Talapady Bhat
Wei Hong
Yong Jun Shi
Suresh Regonda
Dongil Choi
Owen Hu
Manoj Joshi
Srikanth Samavedam
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Invited) Room Temperature Aging Effect Improvement for Device Stability and Manufacturability of FinFET Technologies
2017
Xiaoli He
Dina H. Triyoso
Suresh Uppal
Bianzhu Fu
Xing Zhang
Shimpei Yamaguchi
Chloe Yong
Bingwu Liu
Manoj Joshi
Srikanth Samavedam
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High-Performance Si 0.45 Ge 0.55 Implant-Free Quantum Well pFET With Enhanced Mobility by Low-Temperature Process and Transverse Strain Relaxation
2014
IEEE Transactions on Electron Devices
Shimpei Yamaguchi
Liesbeth Witters
Jerome Mitard
Geert Eneman
Geert Hellings
Andriy Hikavyy
Roger Loo
Naoto Horiguchi
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Citations (2)
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