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David O. Scanlon
David O. Scanlon
Condensed matter physics
Physics
Molecular physics
Gallium nitride
Electronic band structure
5
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23
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The electronic band structure and optical properties of boron arsenide.
2019
arXiv: Materials Science
John Buckeridge
David O. Scanlon
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Role of spin-orbit coupling in the electronic structure of IrO2
2018
Physical Review Materials
Pranab Kumar Das
Jagoda Slawinska
Ivana Vobornik
Jun Fujii
Anna Regoutz
J. M. Kahk
David O. Scanlon
Benjamin J Morgan
Cormac McGuinness
Evegeny Plekhanov
Domenico Di Sante
Ying-Sheng Huang
Ruei-San Chen
Giorgio Rossi
Silvia Picozzi
Will Branford
Giancarlo Panaccione
David J. Payne
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Donor and Acceptor Characteristics of Native Point Defects in GaN
2018
arXiv: Materials Science
Zijuan Xie
Yu Sui
John Buckeridge
C. Richard A. Catlow
Thomas W. Keal
Paul Sherwood
Aron Walsh
Matthew R. Farrow
David O. Scanlon
Scott M. Woodley
Alexey A. Sokol
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Demonstration of the donor characteristics of Si and O defects in GaN using hybrid QM/MM
2017
Physica Status Solidi (a)
Zijuan Xie
Yu Sui
John Buckeridge
C. Richard A. Catlow
Thomas W. Keal
Paul Sherwood
Aron Walsh
David O. Scanlon
Scott M. Woodley
Alexey A. Sokol
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Citations (13)
Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors
2017
Physica Status Solidi (a)
Matthew R. Farrow
John Buckeridge
Tomas Lazauskas
David Mora-Fonz
David O. Scanlon
C. Richard A. Catlow
Scott M. Woodley
Alexey A. Sokol
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Citations (5)
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