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T.S. Yang
T.S. Yang
Bell Labs
Electronic engineering
CMOS
Physics
Optoelectronics
Gate oxide
5
Papers
21
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Enhanced i-line lithography using AZ BARLi coating
1996
T.S. Yang
Taeho Kook
W. A. Josephson
A Mark
Ralph R. Dammel
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Citations (4)
A twin-tub CMOS using self-aligned channel-stop in conjunction with poly-buffer LOCOS for 1M/4M SRAM application
1991
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
Min-Liang Chen
W. Juengling
S.J. Hillenius
T.S. Yang
C.C. Fu
D.P. Favreau
R. Powell
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Self-aligned silicided inverse-T gate LDD devices for sub-half micron CMOS technology
1990
IEDM | International Electron Devices Meeting
Min-Liang Chen
S.J. Hillenius
W. Juengling
T.S. Yang
A. Kornblit
W.S. Lindenberger
J.A. Swiderski
D.P. Favreau
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Citations (1)
A folded extended window MOSFET for ULSI applications
1988
IEEE Electron Device Letters
Chih-Yuan Lu
D.S. Yaney
K.H. Lee
M. S. Twiford
Nun-Sian Tsai
T. Kook
L.B. Fritzinger
Min-Liang Chen
T.S. Yang
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Citations (7)
Constraints in p-channel device engineering for submicron CMOS technologies
1988
IEDM | International Electron Devices Meeting
Min-Liang Chen
W.T. Cochran
T.S. Yang
C. Dziuba
C. Leung
W. Lin
W. Jungling
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Citations (9)
1