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Dirk Wellekens
Dirk Wellekens
Katholieke Universiteit Leuven
Optoelectronics
Schottky diode
High-electron-mobility transistor
Materials science
Threshold voltage
5
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31
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Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology
2021
IPFA | International Symposium on the Physical and Failure Analysis of Integrated Circuits
Jethro Oroceo Gallardo
Brice De Jaeger
Sachidananda Dash
Shun-Wei Tang
Thanh Nga Tran
Dirk Wellekens
Benoit Bakeroot
Stefaan Decoutere
Tian-Li Wu
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Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
2021
Physica Status Solidi (a)
P.-C. Hsu
Eddy Simoen
Hu Liang
Brice De Jaeger
Benoit Bakeroot
Dirk Wellekens
Stefaan Decoutere
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Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate
2019
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Benoit Bakeroot
Steve Stoffels
Niels Posthuma
Dirk Wellekens
Stefaan Decoutere
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GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
2019
IEDM | International Electron Devices Meeting
Xiangdong Li
Steve Stoffels
Benoit Bakeroot
Dirk Wellekens
B. Vanhove
T. Cosnier
Robert Langer
Denis Marcon
Guido Groeseneken
Stefaan Decoutere
N. Amirifar
Karen Geens
Ming Zhao
W. Guo
Hu Liang
Shuzhen You
Niels Posthuma
B. De Jaeger
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Citations (19)
650 V p-GaN Gate Power HEMTs on 200 mm Engineered Substrates
2019
WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
Karen Geens
Stefaan Decoutere
Xiangdong Li
Ming Zhao
Weiming Guo
Dirk Wellekens
Niels Posthuma
Dirk Fahle
Özgür Aktaş
Vlad Odnoblyudov
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Citations (3)
1