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Lars Voss

Lawrence Livermore National Laboratory

5

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13

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Rapid non-destructive detection of defects in bulk and epitaxially grown GaN

2020
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Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

2020 Physica Status Solidi (a)
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Design considerations for three-dimensional betavoltaics

2019 AIP Advances
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Maskless random antireflective nanotexturing of single crystal SiC

2019 Journal of Vacuum Science & Technology B
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Intrinsic shape of free carrier absorption spectra in 4H-SiC

2019 Journal of Applied Physics
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