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L. Ngwendson
L. Ngwendson
Dynex Semiconductor
Electronic engineering
Engineering
Silicon carbide
Schottky diode
Insulated-gate bipolar transistor
2
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6.5 kV Si/SiC Hybrid Power Module Technology
2019
Materials Science Forum
Yogesh Sharma
Paul Mumby-Croft
L. Ngwendson
Matthew Packwood
Lee Coulbeck
M. Birkett
C. Kong
Huaping Jiang
Y. Wang
Ian Deviny
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Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies
2018
EPE | European Conference on Power Electronics and Applications
Yogesh K. Sharma
Paul Mumby-Croft
L. Ngwendson
L. Coulbeck
M. Birkett
Huaping Jiang
Yangang Wang
Ian Deviny
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