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Shumeng Yan
Shumeng Yan
Chinese Academy of Sciences
Materials science
Optoelectronics
Breakdown voltage
Diode
Schottky barrier
3
Papers
4
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0
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Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm²
2021
IEEE Transactions on Electron Devices
Xiaolu Guo
Yaozong Zhong
Yu Zhou
Shuai Su
Xin Chen
Shumeng Yan
Jianxun Liu
Xiujian Sun
Qian Sun
Hui Yang
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Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination
2021
Applied Physics Letters
Xiaolu Guo
Yaozong Zhong
Xin Chen
Yu Zhou
Shuai Su
Shumeng Yan
Jianxun Liu
Xiujian Sun
Qian Sun
Hui Yang
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Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor
2021
Applied Physics Letters
Xin Chen
Yaozong Zhong
Yu Zhou
Shuai Su
Shumeng Yan
Xiaolu Guo
Hongwei Gao
Xiaoning Zhan
SiHua Ouyang
Zi-Hui Zhang
Wengang Bi
Qian Sun
Hui Yang
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