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M. Haeberlen
M. Haeberlen
Physics
Wide-bandgap semiconductor
Band gap
Raman spectroscopy
Crystallographic defect
4
Papers
12
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Theoretical interpretation of tilting-angle maps in heteroepitaxial films
2018
F Rovaris
M. H. Zoellner
Peter Zaumseil
Markus Andreas Schubert
Giovanni Capellini
Thomas Schroeder
P. Storck
M. Haeberlen
Georg Schwalb
Carsten Richter
Tobias U. Schülli
Anna Marzegalli
Francesco Montalenti
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Dynamics of cross-hatch evolution in heteroepitaxy
2018
F Rovaris
M. H. Zoellner
Peter Zaumseil
M. A. Schubert
L. Di Gaspare
M. De Seta
Giovanni Capellini
Thomas Schroeder
P. Storck
M. Haeberlen
Georg Schwalb
Carsten Richter
Tobias U. Schülli
Anna Marzegalli
Francesco Montalenti
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Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon
2015
Applied Physics Letters
L. Lupina
M. H. Zoellner
Tore Niermann
B. Dietrich
Giovanni Capellini
Sb Thapa
M. Haeberlen
Michael Lehmann
P. Storck
T. Schroeder
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Citations (7)
Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts
2014
Journal of Applied Physics
A. Szyszka
L. Lupina
Grzegorz Lupina
M. A. Schubert
P. Zaumseil
M. Haeberlen
P. Storck
S. B. Thapa
T. Schroeder
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Citations (5)
1