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B. Winningham
B. Winningham
Air Force Research Laboratory
Metalorganic vapour phase epitaxy
Chemistry
High-electron-mobility transistor
Analytical chemistry
Chemical vapor deposition
2
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81
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High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
2010
IEEE Electron Device Letters
A. Crespo
M. M. Bellot
Kelson D. Chabak
James K. Gillespie
Gregg H. Jessen
Virginia Miller
Manuel Trejo
G. D. Via
D. Walker
B. Winningham
H. E. Smith
T. Cooper
Xiang Gao
Shiping Guo
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Citations (79)
High frequency performance of Ga free barrier AlInN/GaN HEMT
2010
Physica Status Solidi (c)
A. Crespo
M. Bellott
Kelson D. Chabak
James K. Gillespie
Gregg H. Jessen
Mauricio Kossler
V. Trimble
Manuel Trejo
G. D. Via
B. Winningham
Howard E. Smith
D. Walker
T. Cooper
Xiang Gao
Shiping Guo
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Citations (2)
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