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Xu Zhang
Xu Zhang
Waseda University
Nanowire
Schottky barrier
Materials science
Optoelectronics
Condensed matter physics
4
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3
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0
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ON current enhancement of nanowire Schottky barrier tunnel field effect transistors
2016
Japanese Journal of Applied Physics
Kohei Takei
Shuichiro Hashimoto
Jing Sun
Xu Zhang
Shuhei Asada
Taiyu Xu
Takashi Matsukawa
Meishoku Masahara
Takanobu Watanabe
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Citations (3)
Effect of Shrinking the Device Width on the Behavior of Nanowire-type Dopant-Segregated Schottky Barrier Si-MOSFET
2016
The Japan Society of Applied Physics
Kiyoshi Endo
Syuichiro Hashimoto
Kohei Takei
Jing Sun
Xu Zhang
Taiyu Xu
Syuhei Asada
Syunsuke Oba
Takashi Matsukawa
M. Masahara
Takanobu Watanabe
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Precise Control of the Nickelidation Process of Si Nanowire by Ar + Ion Irradiation
2016
The Japan Society of Applied Physics
Shunsuke Oba
Shuichiro Hashimoto
Kohei Takei
Jing Sun
Xu Zhang
Taiyu Xu
Shuhei Asada
Toshihiro Usuda
Kiyoshi Endo
Motohiro Tomita
Hiroki Tokutake
Ryosuke Imai
Atsushi Ogura
Takashi Matsukawa
Meishoku Masahara
Takanobu Watanabe
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ON Current Enhancement of Nanowire Schottky Barrier Tunnel FET
2015
Kohei Takei
Shuichiro Hashimoto
Jing Sun
Xu Zhang
Shuhei Asada
Taiyu Xu
T. Wakamizu
Takashi Matsukawa
Meishoku Masahara
Takanobu Watanabe
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