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S. Maji
S. Maji
National Institute of Technology, Durgapur
Optoelectronics
Ohmic contact
Resistive random-access memory
Materials science
Voltage
3
Papers
27
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Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfO x buffer layer
2021
Journal of Materials Science: Materials in Electronics
S. Maji
A. D. Paul
Partha Pratim Das
Sayan Chatterjee
P. Chatterjee
Vinod R. Dhanak
Amit K. Chakraborty
R. Mahapatra
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Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices
2019
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
S. Maji
Subhranu Samanta
P. Das
S. Maikap
V.R. Dhanak
I. Z. Mitrovic
Rajat Mahapatra
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Citations (8)
Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric
2015
Microelectronic Engineering
Rajat Mahapatra
S. Maji
Alton B. Horsfall
N. G. Wright
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Citations (17)
1