Old Web
English
Sign In
Acemap
>
authorDetail
>
A. Krakovinsky
A. Krakovinsky
Aix-Marseille University
Degradation (geology)
High-electron-mobility transistor
Optoelectronics
Electronic engineering
Engineering
3
Papers
12
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT
2021
IEEE Transactions on Electron Devices
A. G. Viey
William Vandendaele
Marie-Anne Jaud
L. Gerrer
X. Garros
J. Cluzel
S. Martín
A. Krakovinsky
Jérôme Biscarrat
Romain Gwoziecki
M. Plissonnier
F. Gaillard
R. Modica
Ferdinando Iucolano
Matteo Meneghini
Gaudenzio Meneghesso
Gérard Ghibaudo
Show All
Source
Cite
Save
Citations (1)
Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT
2019
IEDM | International Electron Devices Meeting
A. G. Viey
Frederic Gaillard
R. Modica
Ferdinando Iucolano
Matteo Meneghini
Enrico Zanoni
Gaudenzio Meneghesso
Gérard Ghibaudo
William Vandendaele
M-A. Jaud
J. Cluzel
J P Barnes
Steve W. Martin
A. Krakovinsky
Romain Gwoziecki
M. Plissonnier
Show All
Source
Cite
Save
Citations (5)
Impact of a laser pulse on HfO2-based RRAM cells reliability and integrity
2016
ICMTS | International Conference on Microelectronic Test Structures
A. Krakovinsky
Marc Bocquet
R. Wacquez
J. Coignus
Damien Deleruyelle
C. Djaou
G. Reimbold
J-M. Portal
Show All
Source
Cite
Save
Citations (6)
1