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Ryunosuke Katada
Ryunosuke Katada
University of Tokyo
Voltage
Materials science
overshoot
Current (fluid)
Gate driver
3
Papers
1
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0
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Momentary High-Z Gate Driving (MHZGD) at Miller Plateau for IGBT Load Current Estimation from Gate Driver
2021
ECCE | Energy Conversion Congress and Exposition
Hiromu Yamasaki
Ryunosuke Katada
Katsuhiro Hata
Makoto Takamiya
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Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs
2021
ECCE | European Conference on Cognitive Ergonomics
Ryunosuke Katada
Katsuhiro Hata
Yoshitaka Yamauchi
Ting-Wei Wang
Ryuzo Morikawa
Cheng-Hsuan Wu
Toru Sai
Po-Hung Chen
Makoto Takamiya
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5 V, 300 MSa/s, 6-bit Digital Gate Driver IC for GaN Achieving 69 % Reduction of Switching Loss and 60 % Reduction of Current Overshoot
2021
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Ryunosuke Katada
Katsuhiro Hata
Yoshitaka Yamauchi
Ting-Wei Wang
Ryuzo Morikawa
Cheng-Hsuan Wu
Toru Sai
Po-Hung Chen
Makoto Takamiya
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