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Astrid Linge

Lille University of Science and Technology

5

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52

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High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

2017 Physica Status Solidi (a)
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High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

2016 Electronics
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Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

2016 Physica Status Solidi (a)
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InAlGaN/GaN HEMTs at Cryogenic Temperatures

2016 Electronics
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High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

2015 Applied Physics Express
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Citations (11)