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Patrick Herfurth
Patrick Herfurth
University of Ulm
Sapphire
Optoelectronics
Electron mobility
Condensed matter physics
Transistor
5
Papers
65
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GaN-on-insulator technology for high-temperature electronics beyond 400 °C
2013
Semiconductor Science and Technology
Patrick Herfurth
David Maier
Y. Men
Rudolf Rösch
Lorenzo Lugani
Jean-François Carlin
N. Grandjean
E. Kohn
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Citations (16)
Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 $^{\circ} {\rm C}$ ) Electronics
2013
IEEE Electron Device Letters
Patrick Herfurth
David Maier
Lorenzo Lugani
Jean-Francois Carlin
Rudolf Rösch
Y. Men
N. Grandjean
E. Kohn
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Citations (18)
Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors
2013
Journal of Applied Physics
Lorenzo Lugani
Jean-François Carlin
M.A. Py
D. Martin
Francesca Rossi
G. Salviati
Patrick Herfurth
E. Kohn
J. Bläsing
A. Krost
N. Grandjean
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Citations (17)
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure
2012
Microelectronics Reliability
Clemens Ostermaier
Peter Lagger
M. Alomari
Patrick Herfurth
David Maier
A. Alexewicz
Marie-Antoinette di Forte-Poisson
Sylvain Delage
G. Strasser
D. Pogany
E. Kohn
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Citations (9)
GaN on sapphire mesa technology
2012
Physica Status Solidi (c)
Patrick Herfurth
Y. Men
Rudolph Rösch
Jean-Francois Carlin
N. Grandjean
E. Kohn
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Citations (5)
1