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Amy Child
Amy Child
GlobalFoundries
Electronic engineering
CMOS
Communication channel
Engineering
Scaling
5
Papers
8
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0
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Buried SiGe as a performance booster in n-channel FDSOI MOSFETs
2019
Solid-state Electronics
Paul A. Clifton
Andreas Goebel
Robert Mulfinger
Amy Child
Sherry Straub
Ryan Sporer
Rick Carter
J. Kluth
Jamie Schaeffer
Bich-Yen Nguyen
G. Chabanne
Nicolas Daval
Walter Schwarzenbach
Manish Hemkar
Schubert S. Chu
S. Moffatt
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Citations (1)
Invited)Extending Advanced CMOS Scaling with SiGe Channel Materials
2018
Rick Carter
Ryan Sporer
Timothy J. McArdle
George Robert Mulfinger
Judson R. Holt
Scott Beasor
Amy Child
Jody A. Fronheiser
Jeremy A. Wahl
Holm Geisler
George Jonathan Kluth
Dina H. Triyoso
Kasun Punchihewa
Uzma Rana
Laks Vanamurthy
D.K. Sohn
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Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor
2017
ICICDT | International Conference on IC Design and Technology
Dina H. Triyoso
George Robert Mulfinger
Klaus Hempel
H. Tao
Fabian Koehler
Laegu Kang
A. Kumar
Timothy J. McArdle
Judson R. Holt
Amy Child
S. Straub
F. Ludwig
Z. Chen
J. Kluth
Rick Carter
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Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges
2016
ICICDT | International Conference on IC Design and Technology
Dina H. Triyoso
Rick Carter
J. Kluth
Klaus Hempel
M. Gribelyuk
Laegu Kang
A. Kumar
Bob Mulfinger
P. Javorka
Kasun Punchihewa
Amy Child
Timothy J. McArdle
Judson R. Holt
S. Straub
Ryan Sporer
P. Chen
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Citations (4)
(Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)
2015
Dina H. Triyoso
Rick Carter
J. Kluth
Scott Luning
Amy Child
Jeremy A. Wahl
Bob Mulfinger
Kasun Punchihewa
Anil Kumar
Laegu Kang
Ryan Sporer
Xiaobo Chen
Sherry Straub
Girish Bohra
Suraj K. Patil
Xing Zhang
Alex Chen
Mitsuhiro Togo
Rohit Pal
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Citations (2)
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