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O. Ostinelli
O. Ostinelli
ETH Zurich
Materials science
Optoelectronics
Performance prediction
Breakdown voltage
Heterojunction
3
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Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications
2021
arXiv: Applied Physics
Xin Wen
Akshay M. Arabhavi
Wei Quan
O. Ostinelli
Chhandak Mukherjee
Marina Deng
Sebastien Fregonese
Thomas Zimmer
Cristell Maneux
Colombo R. Bolognesi
Mathieu Luisier
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Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications
2021
Journal of Applied Physics
Xin Wen
Akshay M. Arabhavi
Wei Quan
O. Ostinelli
Chhandak Mukherjee
Marina Deng
Sebastien Fregonese
Thomas Zimmer
Cristell Maneux
Colombo R. Bolognesi
Mathieu Luisier
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Development of Ultrahigh-Wideband InP/GaAsSb/InP DHBTs (Invited)
2008
The Japan Society of Applied Physics
C.R. Bolognesi
H.G. Liu
O. Ostinelli
Yuping Zeng
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