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J. Elbeyrouthy
J. Elbeyrouthy
University of Montpellier
Optoelectronics
Infrasound
Materials science
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4
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1
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Low frequency noise characterization and modeling of SiGe HBT featuring LASER annealing in a 55-nm CMOS node
2019
ICNF | International Conference on Noise and Fluctuations
J. Elbeyrouthy
A. Vauthelin
B. Sagnes
F. Pascal
Alain Hoffmann
Matteo Valenza
Sebastien Haendler
Alexis Gauthier
Pascal Chevalier
Daniel Gloria
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Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors
2019
RADECS | European Conference on Radiation and Its Effects on Components and Systems
J. Elbeyrouthy
A. Vauthelin
M Seif
B. Sagnes
F. Pascal
Alain Hoffmann
Matteo Valenza
Jérôme Boch
Tadec Maraine
Sebastien Haendler
Alexis Gauthier
Pascal Chevalier
Daniel Gloria
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Localization of 1/f noise sources in Si/SiGe:C HBTs
2018
M Seif
F. Pascal
B. Sagnes
J. Elbeyrouthy
Alain Hoffmann
Sebastien Haendler
Pascal Chevalier
Daniel Gloria
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Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies
2017
ICM | International Conference on Microelectronics
M. Seif
F. Pascal
B. Sagnes
J. Elbeyrouthy
A. Hoffmann
S. Haendler
Pascal Chevalier
D. Gloria
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