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D.T. Castro
D.T. Castro
Katholieke Universiteit Leuven
Electronic engineering
Phase-change memory
Voltage
Scaling
Materials science
4
Papers
67
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Transient Characteristics of the Reset Programming of a Phase-Change Line Cell and the Effect of the Reset Parameters on the Obtained State
2009
IEEE Transactions on Electron Devices
Ludovic Goux
Thomas Gille
D.T. Castro
G. Hurkx
J. G. Lisoni
R. Delhougne
D. J. Gravesteijn
K. De Meyer
Karen Attenborough
Dirk Wouters
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Citations (9)
Scaling Properties of Doped Sb2Te Phase Change Line Cells
2008
International Memory Workshop
F. J. Jedema
M.A.A. t Zandt
Rob A. M. Wolters
D.T. Castro
G. A. M. Hurkx
R. Delhougne
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Citations (3)
Evidence of the Prominent Role of the Time-Under-Melt Parameter in the Reset Switching of Phase-Change Line Cells
2008
International Memory Workshop
Ludovic Goux
Thomas Gille
D.T. Castro
G. Hurkx
Judit Lisoni
R. Delhougne
D. J. Gravesteijn
K. De Meyer
Karen Attenborough
Dirk Wouters
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Citations (1)
Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
2007
IEDM | International Electron Devices Meeting
D.T. Castro
Ludovic Goux
G.A.M. Hurkx
K. Attenborough
R. Delhougne
J. G. Lisoni
F.J. Jedema
Michael A. A. in t Zandt
Robertus Adrianus Maria Wolters
D. J. Gravesteijn
Marcel A. Verheijen
M. Kaiser
Rgr Weemaes
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Citations (54)
1