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Shinichi Iwakami
Shinichi Iwakami
Breakdown voltage
Optoelectronics
Heterojunction
Transistor
Analytical chemistry
4
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154
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Normally-off AlGaN/GaN HFETs using NiO x gate with recess
2009
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Nobuo Kaneko
Osamu Machida
Masataka Yanagihara
Shinichi Iwakami
Ryohei Baba
Hirokazu Goto
Akio Iwabuchi
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Citations (26)
Evaluation of AlGaN/GaN heterostructure field-effect transistors on si substrate in power factor correction circuit
2007
Japanese Journal of Applied Physics
Shinichi Iwakami
Osamu Machida
Yoshimichi Izawa
Ryohei Baba
Masataka Yanagihara
Toshihiro Ehara
Nobuo Kaneko
Hirokazu Goto
Akio Iwabuchi
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Citations (22)
20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate
2007
Japanese Journal of Applied Physics
Shinichi Iwakami
Osamu Machida
Masataka Yanagihara
Toshihiro Ehara
Nobuo Kaneko
Hirokazu Goto
Akio Iwabuchi
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Citations (49)
AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation
2004
Japanese Journal of Applied Physics
Shinichi Iwakami
Masataka Yanagihara
Osamu Machida
Emiko Chino
Nobuo Kaneko
Hirokazu Goto
Kohji Ohtsuka
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