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Masato Ishibashi
Masato Ishibashi
Renesas Electronics
Analytical chemistry
Shallow trench isolation
Physics
Transistor
Electronic engineering
4
Papers
14
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Layout-Independent Transistor with Stress-Controlled and Highly Manufacturable Shallow Trench Isolation Process
2007
Japanese Journal of Applied Physics
Katsuyuki Horita
Masato Ishibashi
Hiroshi Umeda
Takaaki Kawahara
Taketoshi Ikeda
Tomohiro Yamashita
Takashi Kuroi
Yasuo Inoue
Yasutaka Horiba
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Citations (1)
Layout Independent Transistor with Stress-controlled and Highly Manufacturable STI Process
2006
The Japan Society of Applied Physics
Katsuyuki Horita
Masato Ishibashi
Hiroshi Umeda
Takaaki Kawahara
T. Ikeda
T. Yamashita
T. Kuroi
Yasuo Inoue
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Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond
2005
Japanese Journal of Applied Physics
Masato Ishibashi
Katsuyuki Horita
Mahito Sawada
Masashi Kitazawa
Motoshige Igarashi
T. Kuroi
T. Eimori
Kiyoteru Kobayashi
Masahide Inuishi
Y. Ohji
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Citations (13)
A Novel STI Process from the View Point of Total Strain Process Design for 45nm Node Devices and Beyond
2004
The Japan Society of Applied Physics
Masato Ishibashi
Katsuyuki Horita
Mahito Sawada
Masashi Kitazawa
Motoshige Igarashi
T. Kuroi
Takahisa Eimori
Kiyoteru Kobayashi
Masahide Inuishi
Yuzuru Ohji
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