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Scott Newell
Scott Newell
HRL Laboratories
Electronic engineering
Leakage (electronics)
Transistor
Engineering
Threshold voltage
2
Papers
16
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Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C
2012
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Rongming Chu
David F. Brown
Daniel Zehnder
Xu Chen
Adam J. Williams
Ray Li
Mary Chen
Scott Newell
Karim S. Boutros
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Citations (14)
Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT
2012
ESSDERC | European Solid-State Device Research Conference
Sameh G. Khalil
Rongming Chu
Ray Li
D. Wong
Scott Newell
Xu Chen
M. Chen
Daniel Zehnder
S. Kim
Andrea Corrion
Brian Hughes
Karim S. Boutros
C. Namuduri
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Citations (2)
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