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R Delhougne
R Delhougne
Katholieke Universiteit Leuven
Electronic engineering
Silicon
Physics
NAND gate
Degradation (geology)
2
Papers
29
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Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
2017
IEDM | International Electron Devices Meeting
A. Subirats
A. Arreghini
E. Capogreco
R Delhougne
C.-L. Tan
Andriy Hikavyy
L. Breuil
Robin Degraeve
V. Putcha
G. Van den bosch
Dimitri Linten
A. Furnemont
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Citations (13)
Quantitative prediction of junction leakage in bulk-technology CMOS devices
2010
Solid-state Electronics
Ray Duffy
A. Heringa
V. C. Venezia
Josine Loo
Marcel A. Verheijen
Mjp Marco Hopstaken
K. van der Tak
M. de Potter
Jc Hooker
P. Meunier-Beillard
R Delhougne
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Citations (16)
1