Old Web
English
Sign In
Acemap
>
authorDetail
>
Marie Antoinette di Forte-Poisson
Marie Antoinette di Forte-Poisson
Analytical chemistry
Physics
Heterojunction
Boron
Inorganic chemistry
5
Papers
38
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design
2015
IEEE Electron Device Letters
Davide Bisi
Alessandro Chini
Fabio Soci
Antonio Stocco
Matteo Meneghini
A. Pantellini
A. Nanni
C. Lanzieri
P. Gamarra
C. Lacam
M. Tordjman
Marie Antoinette di Forte-Poisson
Gaudenzio Meneghesso
Enrico Zanoni
Show All
Source
Cite
Save
Citations (24)
Boron Implantation into $\bf GaAs/Ga_{0.5}In_{0.5}P$ Heterostructures
1997
Japanese Journal of Applied Physics
Achim Henkel
Sylvain Delage
Marie Antoinette di Forte-Poisson
Herve Blanck
Hans L. Hartnagel
Show All
Source
Cite
Save
Citations (3)
Boron Implantation into GaAs/Ga0.5In0.5P Heterostructures
1997
Japanese Journal of Applied Physics
Achim Henkel
Sylvain Delage
Marie Antoinette di Forte-Poisson
Herve Blanck
Hans L. Hartnagel
Show All
Source
Cite
Save
Citations (11)
Ga1-xInxAs/lnAsyP1-ylnP Photodiodes for 1.6m to 2.4m Spectral Region Grown by Low Pressure MO-CVD
1992
Marie Antoinette di Forte-Poisson
C. Brylinski
J. Di-Persio
X. Hugon
B. Vilotich
C.L. Thomson
Show All
Source
Cite
Save
Citations (0)
Laser à semiconductor à courte longeur d'onde
1982
Marie Antoinette di Forte-Poisson
J.P. Hirtz
J.P. Duchemin
Baudoin de Cremoux
Show All
Source
Cite
Save
Citations (0)
1