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David Elsaesser
David Elsaesser
Rensselaer Polytechnic Institute
Optoelectronics
Polar
Quantum well
Wurtzite crystal structure
Optics
5
Papers
20
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Nanopatterned epitaxy of non-polar Ga1-yInyN layers with caps and voids
2017
Journal of Applied Physics
Adam S. Bross
Mark T. Durniak
David Elsaesser
Christian Wetzel
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Optimizing GaInN/GaN light-emitting diode structures under piezoelectric polarization
2017
Journal of Applied Physics
David Elsaesser
Mark T. Durniak
Adam S. Bross
Christian Wetzel
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Citations (6)
Green Emitting Cubic GaInN/GaN Quantum Well Stripes on Micropatterned Si(001) and Their Strain Analysis
2016
Advanced electronic materials
Mark T. Durniak
Adam S. Bross
David Elsaesser
Anabil Chaudhuri
Michael L. Smith
Andrew A. Allerman
Seung-Chang Lee
Steven R. J. Brueck
Christian Wetzel
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Citations (14)
(Invited) Group-III Nitrides to the Extreme --- from LEDs and Solar Cells to the Transistor
2015
Adam S. Bross
Liang Zhao
David Elsaesser
Zhongda Li
Mark T. Durniak
Theeradetch Detchprohm
Tat-Sing Paul Chow
C. Wetzel
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(Invited) Growth of Non-Polar Cubic GaN on Common Si
2015
Mark T. Durniak
Adam S. Bross
David Elsaesser
Anabil Chaudhuri
Soohee Lee
Steven R. J. Brueck
C. Wetzel
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