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Al-Moatasem El-Sayed

Vienna University of Technology

34

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593

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Mitigating switching variability in carbon nanotube memristors

2021 IRPS | International Reliability Physics Symposium
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Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

2021 Physical review applied
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Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO 2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

2020 IEDM | International Electron Devices Meeting
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Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

2019 ESSDERC | European Solid-State Device Research Conference
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First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2

2019 Materials Science Forum
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Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

2019 IEEE Electron Device Letters
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Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.

2019 IRPS | International Reliability Physics Symposium
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Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

2019 IEEE Electron Device Letters
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Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces

2019 Physical Review B
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Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs

2019
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