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B. Rebuffat
B. Rebuffat
STMicroelectronics
Electronic engineering
Chemistry
Analytical chemistry
Materials science
Ohmic contact
5
Papers
7
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All regimes mobility extraction using split C–V technique enhanced with charge-sheet model
2015
Solid-state Electronics
Q. Hubert
M. Carmona
B. Rebuffat
Jordan Innocenti
P. Masson
L. Masoero
Franck Julien
Laurent Lopez
P. Chiquet
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Citations (1)
Relaxation effect on cycling on NOR flash memories
2015
EDSSC | International Conference on Electron Devices and Solid-State Circuits
B. Rebuffat
J.-L. Ogier
P. Masson
Marc Mantelli
R. Laffont
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Effect of AC stress on oxide TDDB and trapped charge in interface states
2014
B. Rebuffat
P. Masson
Jean-Luc Ogier
Marc Mantelli
R. Laffont
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Effect of ions presence in the SiOCH inter metal dielectric structure
2013
ESSDERC | European Solid-State Device Research Conference
B. Rebuffat
V. Della Marca
P. Masson
J.-L. Ogier
Marc Mantelli
O. Paulet
Laurent Lopez
R. Laffont
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MOSFET layout modifications for hump effect removal
2013
Microelectronic Engineering
M. Carmona
B. Rebuffat
Julien Delalleau
O. Gagliano
Laurent Lopez
J.-L. Ogier
D. Goguenheim
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Citations (1)
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