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Peter Michael Smowton

Cardiff University
University of Wales

373

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3280

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QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

2021 CLEO | Conference on Lasers and Electro-Optics
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Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy

2021
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The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes

2021 IPC | IEEE Photonics Conference
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Modeling the effects of p-modulation doping in InAs quantum dot devices

2021 NUSOD | International Conference on Numerical Simulation of Optoelectronic Devices
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Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate

2021 Applied Physics Letters
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Quick fabrication of 940nm emitting VCSEL arrays for commercial wafer characterization

2021
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Gain Measurements on Vertical Cavity Surface Emitting Laser Material Using Segmented Contact Technique

2021 IPC | IEEE Photonics Conference
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Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 μm

2021
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Quick fabrication VCSELs for characterisation of epitaxial material

2021 Applied Sciences
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150mm full wafer fabrication and characterization of 940nm emitting VCSELs for high-volume manufacture

2021
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