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J. P. Mannaerts

Bell Labs
Alcatel-Lucent
Agere Systems

185

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5559

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Transmission electron microscopy study of intermetallic compound Fe3Al x Si1−x epitaxially grown on GaAs

2020
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In sifu growth and properties of single-crystalline-Iike La2-$rXCu04 epitaxial films by off-axis sputtering

2010
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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

2004 Journal of Electronic Materials
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Nano-interfaces of wide bandgap semiconductors with novel oxides - their science and impacts on next generation electronic devices

2004
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GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

2003 Applied Physics Letters
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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

2003 IEEE Electron Device Letters
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GaAs-based MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer deposition

2003 DRC | Device Research Conference
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Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs

2003 IEEE Transactions on Electron Devices
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Advances in high κ gate dielectrics for Si and III-V semiconductors

2003 Journal of Crystal Growth
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Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

2003 Solid-state Electronics
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