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Benjamin Iñiguez

Rovira i Virgili University

5

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3

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Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

2021 IEEE Transactions on Electron Devices
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Compact Modeling of Organic and IGZO TFTs from 150 to 350K

2021 EDTM | IEEE Electron Devices Technology and Manufacturing Conference
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Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances

2021 IEEE Transactions on Electron Devices
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A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET

2020
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Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET

2020
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