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E. Granger
E. Granger
STMicroelectronics
Electrical engineering
Electronic engineering
Transistor
Amplifier
Engineering
3
Papers
14
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A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions
2019
IEDM | International Electron Devices Meeting
X. Garros
Florian Cacho
Emmanuel Vincent
E. Granger
F. Gaillard
V. Knopik
Nathalie Revil
A. Divay
J. Cluzel
J Lugo
A. Giry
X. Federspiel
Guillaume Bertrand
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Citations (4)
A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions
2019
X. Garros
Florian Cacho
Emmanuel Vincent
E. Granger
F. Gaillard
V. Knopik
Nathalie Revil
A. Divay
J. Cluzel
J Lugo
A. Giry
X. Federspiel
G. Bertrand
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Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC
2016
SiRF | Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
F. Gianesello
A. Monroy
V. Vialla
E. Canderle
Guillaume Bertrand
M. Buczko
M. Coly
Jeff Nowakowski
N. Revil
L. Rolland
D. Gloria
A. Juge
S. Gachon
J. P. Aubert
E. Granger
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Citations (10)
1