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D. Buttari
D. Buttari
Physics
Analytical chemistry
Logic gate
Indium phosphide
High-electron-mobility transistor
3
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68
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Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications
2010
IRPS | International Reliability Physics Symposium
Y.C. Chou
D. Leung
M. Biedenbender
D. Buttari
D. Eng
R.S. Tsai
C. H. Lin
L.S. Lee
X. B. Mei
Mike Wojtowicz
M. Barsky
R. Lai
A. Oki
T. Block
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Citations (1)
High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates
2010
IPRM | International Conference on Indium Phosphide and Related Materials
Y.C. Chou
D. Leung
M. Biedenbender
D. Eng
D. Buttari
X. B. Mei
C. H. Lin
Roger S. Tsai
R. Lai
M. Barsky
M. Wojtowicz
A. Oki
T. Block
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Citations (3)
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures
2003
Applied Physics Letters
D. Buttari
Alessandro Chini
Tomas Palacios
Robert Coffie
Likun Shen
Huili Grace Xing
Sten Heikman
Lee McCARTHY
Arpan Chakraborty
Sarah L. Keller
Umesh K. Mishra
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Citations (64)
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