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Jiadong Ren

Semiconductor Manufacturing International Corporation

5

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29

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The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions

2016 Solid-state Electronics
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The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

2015 Journal of Semiconductors
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A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

2015 Nano-micro Letters
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PVD TiN for Bottom Electrode of Phase Change Memory

2014
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Optical emission spectroscopy analysis for Ge2Sb2Te5 etching endpoint detection in HBr/He plasma

2013
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