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Edward Lloyd Hutchins

Cree Inc.

5

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6

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III-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High Power RF Transistors

2005 MRS Proceedings
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Electrical and Optical Characteristics of Delta Doped AlGaN Cladding Layer Materials for Highly Efficient 340nm Ultra Violet LEDs

2003 MRS Proceedings
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Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?

2003 Physica Status Solidi (c)
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Background Impurity Reduction and Iron Doping of Gallium Nitride Wafers

2002 MRS Proceedings
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Properties of Delta Doped Al 0.25 Ga 0.75 N and GaN Epitaxial Layers

2002 MRS Proceedings
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