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Jonathan H. Ma
Jonathan H. Ma
University of California, Berkeley
Extreme ultraviolet lithography
Quantum chemistry
Resist
Electron
Secondary electrons
6
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8
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0
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Elucidating the radiation chemistry of prototypical tin-oxo resist with first-principles computations
2021
Jonathan H. Ma
Patrick P. Naulleau
David Prendergast
Andrew R. Neureuther
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Crystalline symmetry-protected non-trivial topology in prototype compound BaAl 4
2021
Kefeng Wang
Ryo Mori
Zhijun Wang
Limin Wang
Jonathan H. Ma
Drew Latzke
David Graf
Jonathan D. Denlinger
Daniel Campbell
B. Andrei Bernevig
Alessandra Lanzara
Johnpierre Paglione
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Excitation selectivity in model tin-oxo resist: a computational chemistry perspective
2020
Jonathan H. Ma
Han Wang
David Prendergast
Andrew R. Neureuther
Patrick P. Naulleau
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Engineering resist-substrate interface: a quantum chemistry study of self-assembled monolayers
2020
Jonathan H. Ma
Isvar A. Cordova
Rudy J. Wojtecki
Andrew R. Neureuther
Patrick P. Naulleau
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Investigating EUV radiochemistry with condensed phase photoemission
2019
Jonathan H. Ma
Andrew R. Neureuther
Patrick P. Naulleau
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Understanding electron driven EUV chemistry (Conference Presentation)
2019
Jonathan H. Ma
Han Wang
David Prendergast
Andrew R. Neureuther
Patrick P. Naulleau
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