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Greg Freeman
Greg Freeman
Georgia Institute of Technology
Electronic engineering
Materials science
Electrical engineering
Optoelectronics
Heterojunction bipolar transistor
5
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7
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Short Communication A doping concentration-dependent upper limit of the breakdown voltage-cutoff frequency product in Si bipolar transistors
2004
Solid-state Electronics
Jae-Sung Rieh
Basanth Jagannathan
David R. Greenberg
Greg Freeman
Seshadri Subbanna
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Introductory Invited Paper Reliability and performance scaling of very high speed SiGe HBTs
2004
Greg Freeman
Jae-Sung Rieh
Zhijian Yang
F. Guarin
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SIGE HBT PERFORMANCE AND IQLIABILITY TRENDS THROUGH fT OF 350GHZ
2003
International Reliability Physics Symposium
Greg Freeman
Jae-Sung Rieh
Basanth Jagannathan
Zhijian Yang
F. Guarin
Alvin J. Joseph
David Ahlgren
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Reliability Characteristics of 200 GHz fT I285 GHz fMm SiGe HBTs
2003
Greg Freeman
Zhijian Yang
F. Guarin
Jae-Sung Rieh
David Ahlgren
Ed Hostetter
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A simple 4-port parasitic de-embedding methodology for high-frequency characterization of SiGe HBTs
2003
RFIC | Radio Frequency Integrated Circuits Symposium
Qingqing Liang
John D. Cressler
Guofu Niu
Yuan Lu
Greg Freeman
David Ahlgren
Ramana M. Malladi
Kim Newton
D.L. Harame
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Citations (6)
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