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Daniel Rondi
Daniel Rondi
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Chemical vapor deposition
Doping
Gallium nitride
Chemistry
5
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55
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Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films
2014
Journal of Crystal Growth
Y. Cordier
E. Frayssinet
Marc Portail
Marcin Zielinski
Thierry Chassagne
M. Korytov
Aimeric Courville
Sébastien Roy
M. Nemoz
M. Chmielowska
P. Vennéguès
H. P. David Schenk
Mark Kennard
Alexis Bavard
Daniel Rondi
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Citations (12)
Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
2012
Applied Physics Express
H. P. David Schenk
Alexis Bavard
E. Frayssinet
Xi Song
F. Cayrel
Hassan Ghouli
Melania Lijadi
Laurent Naïm
Mark Kennard
Y. Cordier
Daniel Rondi
Daniel Alquier
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Citations (9)
Process for manufacturing a thick epitaxial layer of gallium nitride on a silicon substrate or the like and layer obtained by said process
2011
David Schenk
Alexis Bavard
Y. Cordier
E. Frayssinet
Mark Kennard
Daniel Rondi
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Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
2011
Journal of Crystal Growth
H. P. D. Schenk
E. Frayssinet
Alexis Bavard
Daniel Rondi
Y. Cordier
Mark Kennard
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Citations (34)
Gain différentiel et compression de gain dans les lasers à puits quantique InGaAs/InGaAsP
1990
M. Cavelier
Laurent Chusseau
H. Lonjaret
J.-M. Lourtioz
Robert Blondeau
M. Krakowski
Daniel Rondi
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