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Byungsu Cho
Byungsu Cho
Samsung
Thin-film transistor
Analytical chemistry
Amorphous solid
Inorganic chemistry
Optoelectronics
4
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17
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Electrical behavior of amorphous indium–gallium–zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer
2014
Current Applied Physics
Heewang Yang
Byungsu Cho
Joo Hyun Park
Seokyoon Shin
Giyul Ham
Hyungtak Seo
Hyeongtag Jeon
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Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier
2014
Applied Physics Letters
Byungsu Cho
Yonghyuk Choi
Heeyoung Jeon
Seokyoon Shin
Hyungtak Seo
Hyeongtag Jeon
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Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface
2013
Applied Physics Letters
Byungsu Cho
Jaesang Lee
Hyungtak Seo
Hyeongtag Jeon
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Citations (7)
Enhanced adhesion and performance of the source/drain electrode using a single-layered Ag(Cu) film for an amorphous silicon thin-film transistor
2003
Applied Physics Letters
Sungjin Hong
Sunyeong Lee
Jun Hyun Park
H. J. Yang
Yeonkyu Ko
Jae-Rock Lee
Byungsu Cho
Chang-Oh Jeong
Kyungjae Chung
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Citations (5)
1