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Hisashi Saito
Hisashi Saito
Toshiba
Nuclear magnetic resonance
Breakdown voltage
Voltage
Electronic engineering
Chemistry
2
Papers
15
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3.2 mΩcm2 enhancement-mode GaN MOSFETs with breakdown voltage of 800 V
2016
Physica Status Solidi (c)
Hisashi Saito
Miki Yumoto
Shigeto Fukatsu
Yosuke Kajiwara
Aya Shindome
Kohei Oasa
Yoshiharu Takada
Kunio Tsuda
Masahiko Kuraguchi
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Citations (4)
Over 550 V breakdown voltage of InAlN/GaN HEMT on Si
2013
Physica Status Solidi (c)
Hisashi Saito
Yoshiharu Takada
Masahiko Kuraguchi
Miki Yumoto
Kunio Tsuda
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Citations (11)
1