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J. H. M. Tng
J. H. M. Tng
GlobalFoundries
Electronic engineering
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Technology CAD
CMOS
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3
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TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement.
2019
IRPS | International Reliability Physics Symposium
Baofu Zhu
E. M. Bazizi
J. H. M. Tng
Z. Li
Edmund Banghart
M. K. Hassan
Y. Hu
D. Zhou
Dongil Choi
L. Qin
X. Wan
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14nm FinFET Device Boost via 2nd Generation Fins Optimized for High Performance CMOS Applications
2018
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
El Mehdi Bazizi
Edmund Kenneth Banghart
Baofu Zhu
J. H. M. Tng
Francis Benistant
Yue Hu
Xiaoli He
D. Zhou
Hsien-Ching Lo
Dongil Choi
J. G. Lee
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Full 3D process/device simulations re-using 2D TCAD knowledge for optimizing N and P-type FinFET transistors
2014
F. Benistant
M. Bazizi
L. Jiang
J. H. M. Tng
M. H. J. Goh
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