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J. Waldron
J. Waldron
Rensselaer Polytechnic Institute
Light-emitting diode
Optoelectronics
High-electron-mobility transistor
Physics
Electron mobility
2
Papers
76
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High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal
2015
Physica Status Solidi (a)
Zhongda Li
J. Waldron
S. Chowdhury
Liang Zhao
Theeradetch Detchprohm
Christian Wetzel
Robert F. Karlicek
T.P. Chow
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Citations (14)
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
2013
Applied Physics Letters
Zhongda Li
J. Waldron
Theeradetch Detchprohm
C. Wetzel
Robert F. Karlicek
T.P. Chow
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Citations (62)
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