Acid etching for accurate determination of dislocation density in GaN

Hot phosphoric-acid etching and atomic force microscopy (AFM) were used to etch and characterize various GaN materials, including freestanding GaN grown by hydride vapor-phase epitaxy (HVPE), metal-organic chemical-vapor deposition (MOCVD) GaN films on sapphire and silicon carbide, and homoepitaxial GaN films on polished freestanding-GaN wafers. It was found that etching at optimal conditions can accurately reveal the dislocations in GaN; however, the optimal etch conditions were different for samples grown by different techniques. The as-grown HVPE samples were most easily etched, while the MOCVD homoepitaxial films were most difficult to etch. Etch-pit density (EPD) ranging from 4 × 106 cm2 to 5 × 109 cm-2 was measured in close agreement with the respective dislocation density determined from transmission electron microscopy (TEM).