Old Web
English
Sign In
Acemap
>
Paper
>
Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor
Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor
2020
Tadatoshi Ito
Ryota Sakamoto
Tatsuya Isono
Yongzhao Yao
Yukari Ishikawa
Narihito Okada
Kazuyuki Tadatomo
Keywords:
Metalorganic vapour phase epitaxy
Heterojunction
Nitrogen
Physics
sapphire substrate
Condensed matter physics
High-electron-mobility transistor
Polar
Correction
Source
Cite
Save
Machine Reading By IdeaReader
38
References
5
Citations
NaN
KQI
[]