Defects on high-resolution negative-tone resist: "The revenge of the blobs"
2013
Resist materials rely on solubility differences between the exposed and unexposed areas to create the
desired image. Most negative-tone resists achieve the solubility difference by crosslinking the exposed area
causing it to be insoluble in developer. The negative tone resist studied here is a high sensitivity negativetone
resist that relies on polarity switching, similar to a positive-tone mechanism, but where the exposed
area is insoluble in aqueous developer resulting in a negative-tone image. During mask evaluation for 14nm
optical technology applications of the studied non-cross linking (polarity switching) resist, 1 - 5 μm size
blob-like defects were found in large numbers under certain exposure conditions. This paper will describe
the process and methodologies used to investigate these blob defects.
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