The diamagnetic susceptibility of hydrogenic donor in two-dimensional semiconductors with anisotropic effective mass of carriers

Abstract In this study, the effects of quantum confinement and effective mass anisotropy parameter on the diamagnetic susceptibility of a hydrogenic donor placed in GaAs, Si, and Ge quantum wells with infinite confinement potential are investigated in the effective mass and parabolic band approximations by using two and one parameter trial wave functions. It is observed that the diamagnetic susceptibility of a hydrogenic donor in anisotropic quantum wells is essentially equal to the transverse diamagnetic susceptibility part when well widths are larger than L  > 100 A, and the impurity is located at center. Moreover, a two parameter trial wave function model gives higher values of diamagnetic susceptibility, except for χ z (GaAs).