Bilateral PIN Diode for Fast Neutron Dose Measurement

A silicon-based bilateral diode for fast neutron dose measurement is presented to take advantage of vertical and lateral current distributions and to achieve high uniform current distribution. The structure is designed to place rectangle ${\bf p +}$ and ${\bf n +}$ contacts on each side of the n-Si wafer. Diodes with different structure parameters are fabricated and the sensitivity to neutron dose is measured. It is found that, in this research, the increase in the lateral space between the two contacts can effectively increase sensitivity. Furthermore, the decrease of the contact length and the increase of current density can also increase sensitivity. The measured sensitivity data are verified with the model.