Nanowire growth on Si wafers by oxygen implantation and annealing

We report on nanowire formation on oxygen implanted Si wafers. In this method, a Si wafer is first oxygen-implanted and then annealed at high temperatures in Ar ambient to promote growth of nanowires with high aspect ratio. Their lengths range from several micrometers to thousands of micrometers and their diameters range from tens of nanometers to a few microns.