Fabrication of CNT Nano-Strands as a Schottky Transistor Platform

In this study, high voltage arc discharge technique is used for direct fabrication of carbon nanotube strands for schottky interconnects to study prototype carbon nanotube field effect transistors. The CNT samples are grown between graphite electrodes mounted on PCB templates in 5 mm gap using pure methane at different flow rate 0.2-1 standard litter per minute under atmospheric conditions. This report discusses the synthesis detail of nano-CNT strands, effect of electrical parameters of arc discharge and growth process. The structure of the grown carbon strands is explored in macro regime by high resolution optical microscope and also by scan electron microscopy technique for structural morphological analysis. The technique has a promising technology to grow unidirectional carbon nanomaterials which is employed on Schottky transistor fabrication.